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| N-Channel Depletion Mode Lateral DMOS FET CORPORATION SD2100 / SST2100 FEATURES DESCRIPTION The SD2100/SST2100 is a depletion mode DMOS lateral FET that provides ultra high speed switching with very low capacitance. The product is available in TO-72 and surface mount SOT-143. ORDERING INFORMATION Part SD2100 SST2100 XSD2100 Package Temperature Range TO-72 -55oC to +125oC SOT-143 -55oC to +125oC Sorted Chips in Carriers -55oC to +125oC * Fast Switching . . . . . . . . . . . . . . . . . . . . . . . . . tON 1.0ns * Low Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . crss 2pf * Low RON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 * Analog Switches * Amplifiers APPLICATIONS CONNECTION DIAGRAMS 3 TO-72 2 4 1 3 2 DRAIN (2) BODY (4) GATE (3) SOURCE 1 1 2 3 4 SOURCE DRAIN GATE SUBSTRATE 3 2 1 4 4 1 BOTTOM VIEW 4 BODY AND CASE DRAIN 2 3 GATE SOURCE (1) BODY IS INTERNALLY CONNECTED TO THE CASE (TOP VIEW) PART MARKING (SOT-231) CD1-2 SST2100 D10 SD2100 / SST2100 CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) SYMBOL VGS VDS ID PD PARAMETERS/TEST CONDITIONS Gate-Source Voltage Drain-Source Voltage Drain Current Power Dissipation Power Derating TJ Tstg TL Operating Junction Temperature Storage Temperature Lead Temperature (1/16" from case for 10 sec.) LIMITS 25 25 50 300 2.4 -55 to 150 -55 to 150 300 o UNITS V mA mW mW/oC C ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) SYMBOL STATIC V(BR)DS IGSS IDSS VGS(OFF ) VGS Drain-Source Breakdown Voltage Gate Reverse Current Saturation Drain Current Gate-Source Cutoff Gate-Source Voltage 0.4 120 rDS(ON) DYNAMIC gfs gos gfs gos Ciss Crss SWITCHING td(ON) tr tOFF Turn-OFF Time 0.7 Turn-ON Time 0.4 5 ns VDD = 5V, RL = 680, VIN = -4V to -2V Forward Transconductance Output Conductance Forward Transconductance Output Conductance Common-Source Input Capacitance Reverse Transfer Capacitance 8000 250 10000 350 5 1 7000 VDG = 10V, VBS = 0V, ID = 10mA, f = 1kHz 500 6 pF 2 VDS = 10V, f = 1MHz, VGS = VBS = -5V 1000 VDS = 10V, VGS = VBS = 0V, f = 1kHz 500 S Drain-Source On-Resistance 40 50 0 1.5 200 25 0.05 7 -1.5 -0.3 -1 0.5 15 1 10 -2 1 V V nA mA VGS = VBS = -5V, ID = 1A VGS = 25V, VDS = VBS = 0V VDS = 10V, VGS = VBS = 0V VDS = 10V, ID = 1A, VBS = 0V VDG = 10V VBS = 0V ID = 100A VBS = 0V ID = 5mA ID = 10mA VGS = 0V VGS = 5V PARAMETER TYP1 MIN MAX UNIT TEST CONDITIONS Note1: For design aid only, not subject to production testing. |
Price & Availability of SD2100
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